Standard MOS Diodes Composed by SOI UTBB Transistors

The main objective of this work is to present an analysis of the performance of UTBB SOI transistors working as standard diodes, where the implementation of ground planes and substrate bias are analyzed. It is shown a reduced leakage current and increased ratio between the on and off-state currents with the substrate bias at −2 V and with a P-type GP implemented. However, both conditions result in increased threshold voltage.