Fabrication of Semi-Polar (11-22) GaN V-Groove MOSFET Using Wet Etching Trench Opening Technique

In this letter, we report the fabrication of an enhancement-mode V-groove metal oxide semiconductor field-effect transistor on semi-polar (11-22) GaN platform. A wet crystallographic hydroxide-based etching approach to achieve a vertical inversion trench sidewall is utilized. This novel fabrication method enables the formation of the vertical trench sidewall channel conduction without the need for a conventional chlorine-based dry etching. The fabricated VMOSFET exhibit a threshold voltage of 9.49 V, a current ON/OFF ratio of >107, an ON-state resistance of 8.0
$\text{m}\Omega $
.cm2, and an output current of 516 A/cm2.