SrTiO3-Bi3.25La0.75Ti3O12 energy storage film capacitors fabricated on silicon-based substrates

The dielectric ceramic film is directly deposited on the wafer, has good electrical interconnection and mechanical support with the wafer, and is easy to integrate on a substrate, which is conducive to the packaging of the entire integrated circuit in the later stage. The miniaturization of devices promotes the miniaturization and integration of integrated circuits. In this paper, 0.4SrTiO3-0.6Bi3.25La0.75Ti3O12(0.4ST-0.6BLT) films which has different concentrations were prepared by sol-gel method, and their energy storage properties were investigated. The surface morphology becomes flat and uniform with the increase of sol concentration. XRD diffraction results indicated that the film's crystallinity is enhanced with increasing sol concentration. Meanwhile, the maximum polarization increases with sol concentration. When the sol concentration is 0.1 mol/L, the P
max
reaches 50.84 μC/cm2. Among them, with the solution concentrations of 0.10 mol/L, the 150 nm 0.4ST-0.6BLT film shows a behemoth energy storage performance of 54.08J/cm3 with high efficiency of 87.30% and exceptional thermal stability when operating at 25-200°C. Therefore, the ST-BLT material has good application prospects in dielectric energy storage capacitors.