Integrated low-profile antenna covering 29-50 GHz band for 5G millimeter-wave application

For the application of 5G millimeter-wave communication, an integrated low-profile antenna covering 29-50 GHz band is proposed. Four metallized layers and four dielectric layers are used to constitute the integrated antenna. The integrated antenna is manufactured by printed circuit board (PCB) technology due to the simple process. A reference antenna with identical dielectric substrates and similar metallic structures is developed for comparison. The profile of the integrated antenna is 0.07λ0 (At 39 GHz, the free space wavelength is λ0). The integrated antenna generates four resonances in a continuous frequency band, and the impedance bandwidth ranges from 28.3 to 50.1 GHz (about 56% relative bandwidth), where |S11| is lower than -10 dB. The integrated antenna reveals the broadband characteristic and has stable broadside radiation patterns within the band. At 45 GHz, the integrated antenna achieves the maximum gain of 10.8 dBi. The integrated broadband antenna with a low profile is suitable for the antenna-in-package application in 5G millimeter-wave band.