An Improved I-V model for Resistive Random Access Memory

In this paper, we performed a simulation for a physical resistive random-access device (RRAM) to propose an improved model representing its electrical characteristics. Voltage ThrEshold Adaptive Memristor (VTEAM) model that operates based on the voltage threshold of the device adapted for the RRAM simulation. We applied some physical features to the model to adjust the internal state variable to improve the simulation results. The internal state variable used in the model was designed after the physical feature such as the distance between the end of the filament and the electrode of the device. Therefore, applying some of these physical conditions affects the simulation results. Simulation results with the newly applied model showed optimized I-V characteristics that resemble the physical device's behavior more than the existing model.