Multi-physics Simulation and Design of Paralleled Silicon Carbide Dual Chip Module

Power modules are developing towards higher voltage, higher current, smaller volume, resulting in the increase in the power density and operating temperature. As the wide bandgap material, Silicon Carbide (SiC) is regarded as the next generation ideal material for power devices, and has shown superior properties enabling power devices to meet the requirements of high voltage, large current, high temperature, and high frequency in both power electronics and pulsed power applications. However, progress in package design to take full advantage of SiC was slow. Based on multi SiC chips parallel requirements for higher current, layout reconstruction of SOT227 package for dual pulse power chips was introduced in this paper. By establishing a finite element model, thermomechanical properties of the module were analyzed. By comparing various material combinations, optimized strategy with reduced thermal stress and temperature was proposed. The parasitic parameters which affect the transient pulse process were also simulated, and power loop gave parasitic inductance less than 15nH. The module was fabricated and showed flexibility in increasing current capacity for high power application.