Research on the yield optimization scheme of ESD devices based on FOPLP packaging

In this paper, the relevant failure analysis is carried out for the electric leakage problem of the product in the H3TRB process. It is discovered that ion migration existed in the metal layer in the chip. According to the conditions of ion migration, we have experimentally verified by changing different materials and verifying the reliability of the product, and it can be seen that the failure is strongly related to the air tightness of the material. It is found that when the material's air tightness reached a certain level, the product did not fail in H3TRB (1000H). Therefore, filling materials with better air tightness around the chip can prevent ion migration in the product in H3TRB. This is also the main solution for the DFN 0603 package to achieve high reliability and mass production.