Package-related degradation condition monitoring of SiC power MOSFETs using current distribution anomaly detection

Anomaly detection in current distribution of wire bonded connection of the Silicon Carbide power MOSFET module is proposed and examined as a comprehensive condition monitoring precursor for monitoring package-related failure modes. The simulation and experimental results show that both wire bond-related and solder layer-related degradation can be detected using the proposed technique. To capture the current distribution profile, magnetic field of the wire bonds is measured using the tunnel magneto-resistance sensors in the sensing subsection of the proposed condition monitoring technique.