1.32-μm GaInNAs-GaAs laser with a low threshold current density

We report on a recent development of diluted nitride laser diodes operating at the wavelengths around 1.3 μm. The lasers grown by molecular beam epitaxy and processed into 20-μm-wide ridge waveguide structures, mounted episides up on subcarriers, exhibit a threshold current density as low as 563 A/cm
²
, slope efficiency of 0.2 W/A per facet, light power up to 40-mW continuous-wave, and characteristic temperature of 97-133 K.