A Compact, 114-GHz, High-efficiency Power Amplifier in a 250-nm InP HBT Process

This work presents a single-stage D-band power amplifier (PA) with high power density and high efficiency at 114 GHz in a 250-nm Indium Phosphide (InP) technology. A pseudo-differential common-base (CB) stage and low-loss coupled-line balun (CLB) are designed to deliver 17.6-dBm output power and 32.7% power-added efficiency (PAE) at 114GHz. Occupying only 0.024mm
²
, the design achieves the highest output power to area ratio, (P
sat
/Area), power gain to area ratio, (Gain/Area), and high efficiency among published D-band PAs.