200-W GaN PA Design Based on Accurate Multicell Transistor Modeling

In this paper, a model extraction technique suitable for GaN transistors with very large periphery is described. The technique is based on the accurate nonlinear model extraction of a reference size device that is then scaled to a larger periphery preserving its original accuracy. The proposed model has been extensively validated with microwave nonlinear load-pull measurements and with the design of a 200-W S-band power amplifier.