A 5 kW, 110V GaN on SiC Transistor for L band Pulsed Applications

This transistor uses GaN on SiC die operating at 110V to achieve 5.4kW with 72% efficiency and 19.2dB gain under industry-standard 32 μs, 4
^%
duty cycle conditions at 1030MHz for IFF/SSR applications. 4.75kW with 69% efficiency was also achieved under Mode S ELM pulse conditions.