Nitrogen-Doped Czochralski Silicon Wafers as Materials for Conventional and Scaled Insulated Gate Bipolar Transistors

Nitrogen-doped silicon wafers manufactured using the Czochralski technique (Cz-Si) with an oxygen concentration ([
$\text{O}_{I}$
]) of 2.5–
$5.6\,\,\mathbf {\times }\,\,10^{17}$
atoms cm
$^{-3}$
are heat treated to simulate the conventional and scaled manufacturing processes of insulated gate bipolar transistors (IGBTs). Subsequently, the oxygen precipitation, lifetime, and gate oxide integrity (GOI) of the Cz-Si wafers are evaluated. After the high-temperature heat treatment that simulates the conventional process, the lifetime of the Cz-Si with an [
$\text{O}_{I}$
] of
$5.6\,\,\mathbf {\times }\,\,10^{17}$
atoms cm
$^{-3}$
only degrades slightly even when oxide precipitates are not detected. In contrast, after the low-temperature heat treatment that simulates the scaled process, oxide precipitates are detected and the lifetime reduces substantially at an [
$\text{O}_{I}$
] of
$5.6\,\,\mathbf {\times }\,\,10^{17}$
atoms cm
$^{-3}$
. The Cz-Si with [
$\text{O}_{I}$
] values below
$3.3\,\,\mathbf {\times }\,\,10^{17}$
atoms cm
$^{-3}$
are considered suitable materials for IGBTs because no oxide precipitate is formed, and the lifetime is not degraded after high- and low-temperature heat treatments. Upon using GOI evaluation, the nitrogen-doped Cz-Si wafers are found to exhibit a breakdown voltage equal to that of an annealed Cz-Si wafer conventionally used for IGBTs. Therefore, nitrogen-doped Cz-Si wafers with [
$\text{O}_{I}$
] below
$3.3\,\,\mathbf {\times }\,\,10^{17}$
atoms cm
$^{-3}$
are potential materials for conventional and scaled IGBTs.