Analysis and Design of Dual-Peak Gmax-Core CMOS Amplifier in D-Band Embedding a T-Shaped Network

In order to overcome the performance limitation of CMOS technology at high frequencies above 100 GHz, the concept of maximum achievable gain (G
max
) with an embedding network has been investigated. In this work, a novel G
max
-core embedding a T-shaped gain-boosting network that provides two G
max
-peaks is analyzed and demonstrated in the D-band with a 28-nm FD-SOI CMOS process. With the proposed topology, one can design the peak G
max
frequencies and in/output impedances simultaneously as desired for high gain and broadband operation. The fabricated amplifier offers a peak small-signal gain and bandwidth of 14.5 dB and 26 GHz, respectively, with power consumption of 21.6 mW in 117 - 143 GHz.