Comprehensive performance evaluation of discrete 1200V IGBT7 S7 for drives application

This paper presents the comprehensive process, from virtual simulation to testbench testing, for evaluating Infineon's TRENCHSTOP(TM) IGBT7 1200 V S7 discrete device in a drive application. The advantages of using the latest Infineon IGBT technology are demonstrated by a simulation and physical test setup. Evaluation board testing with the standard two-level, three-phase topology has demonstrated that Infineon’s TRENCHSTOP(TM) IGBT7 1200 V S7 discrete devices have an increased efficiency and power density compared to former Infineon silicon technologies and to similar products from competitors.