The Impact of Power Cycling Induced Degradation Mechanisms on the Magnetic Field Signature of IGBTs

This paper presents the effect of power semiconductor joining degradation on the surrounding magnetic field caused by the chips load current. Therefore, a number of IGBT samples were artificially aged by power cycling. After the aging process, the magnetic field pattern was measured and evaluated. On this basis the viability of the magnetic field signature as a means to detect power semiconductor degradation is discussed.