A 600V Half-Bridge Power Stage Fully Integrated with 25V Gate-Drivers in SiC CMOS Technology

A 600V half-bridge power stage fully integrated with 25V gate-drivers is presented to demonstrate a new $0.5 \mu \mathrm{m}$ Silicon Carbide (SiC) CMOS technology. The technology allows for integrating low-voltage CMOS devices with multiple lateral high-voltage NMOS devices. Thus, multi-switch power converters or multiple power converters can be integrated along with their gate-drivers and low-voltage control circuits in the same SiC chip. The half-bridge power stage has two power switches with $500\mathrm{m} \Omega$ ON resistance, and it operates from a 600V input with up to 1A load and a switching frequency of 1MHz. The gate-drivers employ a capacitive level shifter and a bootstrap circuit to convert the PWM control signal from the 25V control domain to the 600V power domain. The gate-driver has a total delay of 36ns and provides a gate-driver signal with a slew rate of 23V/ns.