A Mixed Method to Mitigate the TID Effects on 28nm FDSOI Transistors

In this work we propose a mixed method to mitigate the effects of Total Ionizing Dose (TID) on 28 nm Fully-Depleted Silicon-On-Insulator (FDSOI) MOSFETs exposed to
$60_{Co}$
gamma radiation at two different dose rates. This new thermal-electrical method uses thermal regeneration by applying rapid annealing cycles in addition to threshold voltage modulation inherent in FDSOI technology. Applying this methodology could enhance the transistor reliability during a mission in radiative environments.