Heavy Ions Radiation Effects on 4kb Phase-Change Memory

In this work we analyze, thanks to both material and 4kb memory arrays characterization, the different effects of heavy ion radiation at high fluences on
$\mathbf{Ge}_{\mathbf{2}}\mathbf{Sb}_{\mathbf{2}}\mathbf{Te}_{\mathbf{5},}$
and Ge-rich GeSbTe based Phase-Change Memory (PCM).