Improvement of CU-CMP EDP Curves for Different Pattern Density

Transmission rate and pattern density become the key factors affecting CU CMP EDP Curve at advanced node. Different CU line pattern density determines the difference of CMP incoming topography. This incoming pattern loading requires CMP to leave enough Process Window to fix. This article provides the direction of CU CMP EDP optimization for different pattern density products, and focuses on RTPC Remain thickness, so as to improve the CMP process window.