Zinc-Alloyed HFO2 Synaptic RRAM with Operating Voltage and Switching Energy Enhancement

In this work, we demonstrate the performance engineering of a HfO
2
-based analog RRAM device based on a Zn alloying approach using ALD. The Zn-alloyed HfO
2
RRAM results in a significant smaller operating voltages and lower switching energy due to the increase in oxygen vacancies elucidated via XPS measurements. Meanwhile, its retention at 85 °C can exceed that of 10
⁵
s. The LTP and LTD of the Zn-alloyed RRAM shows good linearity for the implementation of artificial neural network in handwriting recognition. Our results provide a pathway for RRAM to meet the requirements of emerging embedded memory applications for analog computing.