Optimization of Shallow Trench Isolation CD micro loading in advance CMOS

This paper investigates the interest of CD microloading to etch silicon in shallow trench isolation (STI). The influence of different processing parameters like, e.g., pressure, gas flow rate, and flow direction on the CD microloading effect have been investigated. It is also shown that CD microloading are improved by, e.g., decreasing the pressure or RF bias power.