SNC SADP Spacer etch process development using carbon hard mask mandrel for sub advanced process DRAM

Self-aligned double patterning (SADP) process has become the standard patterning technology for extending the half-pitch resolution beyond current ArF lithography tool's limit. In this paper, we overcome the oxide spacer shape deformation issue during SADP etch process to minimize the pitch walking deviation. The SADP technology is applied for advanced process of storage node contact (SNC) process to meet DRAM scaling requirements.