A Novel Anti-Ferroelectric Negative Capacitance Tunneling Fet with Mitigated Subthreshold Swing Degradation Issue

In this work, a novel anti-ferroelectric (AFE) negative capacitance tunneling FET (ANC-TFET) is proposed and simulated based on our developed device model. In ANC-TFET, the amplification coefficient (A
V
) of AFE layer is designed to be increasing when the underlying TFET in series operates in subthreshold region, and thus the subthreshold swing (SS) degradation issue in TFETs can be mitigated. Comparing with conventional TFET, the ANC-TFET shows not only steeper SS due to A
V
>1 but also larger current range of sub-60mv/dec SS for more than one decade at 0.4V operation voltage, showing its great potential for low power application.