Film Property Analysis by FTIR on ULK Film Deposition and UV Curing Process

Ultra low-k (ULK) film was deposited by plasma enhanced chemical vapor deposition (PECVD) from Diethoxymethylsilane (DEMS, C
5
H
14
O
2
Si) and a-Terpinene (ATRP, C
10
H
16
), and cured by UV process to produce porous ULK film. Shrinkage and dielectric constant (k) of ULK film were investigated using ellipsometer, C-V measurement techniques. The film composition was investigated by Fourier Transform Infrared Spectroscopy (FTIR), and results showed lower Si-CH3 and CH
x
peaks and conversion from Si-O cage to Si-O network, with longer UV cure time, achieving lower k and higher shrinkage.