Research of ultra high aspect ratio silicon etching in the advanced process

Integrated circuit equipment is the foundation of the integrated circuit industry, and its technological level represents a country's high-tech research and development capabilities. Since the “Tenth Five-Year Plan”, domestic semi vendor has included integrated circuit manufacturing equipment into major national special research and development projects. Ultra high aspect ratio silicon etch process has been demonstrated to build in DRAM process with inductively coupled plasma (ICP) on 612E tool. Key specifications are high aspect ratio, high etch rate, good trench sidewall profile with smooth surface, high aspect ratio dependent etch (ARDE), and low etch loading effects [1]. The results of the development work are implemented in loop process and hardware configuration of 612E.