Experimental demonstration of sub-nanosecond switching in 2D hexagonal Boron Nitride resistive memory devices

Resistive switching in 2D materials such as hexagonal boron nitride (hBN) and Transition Metal Dichalcogenides (TMDs) have been demonstrated recently [1]–[3]. These memory devices with an ultra-thin switching layer have the potential to achieve low operating voltages, low variability and are also suitable for flexible electronic applications [4]. Here we report the first experimental observation of sub-nanosecond switching of 2D hBN based resistive random access memory (RRAM) devices. This is the fastest switching speed in 2D RRAMs, surpassing the previously reported 5ns switching [5]. Devices also exhibit consistent repeatable switching between high-low memory states with ultra-short pulses (pulse-width ~ 2.7ns).