Ultrathin Ferroelectric Nondoped HfO2 for MFSFET with High-speed and Low-voltage Operation

Ferroelectric nondoped HfO
2
has been investigated for metal-ferroelectric-semiconductor field-effect transistor (MFSFET) application due to the low crystallization temperature and the suppression of SiO
2
interfacial layer (IL) formation between HfO
2
and Si substrate. We realized MFSFET with the scaling of ferroelectric gate insulator utilizing 5 nm thick nondoped HfO
2
, and the ferroelectric property was improved by decreasing the sputtering damage of Pt gate electrode deposition [1]. However, the low frequency noise affected by interfacial property of MFSFET becomes important, especially for scaled device [2]. In this research, we investigated the effects of sputtering power for 5 nm thick HfO
2
gate insulator formation to realize high-speed operation of MFSFET.