High-Performance Bio-Memristive Devices with Natural Egg Albumen as a Switching Layer

In this paper, natural protein egg albumen was demonstrated as a promising active layer for high performance bio-memristive resistive random-access memory (ReRAM) devices with Ag as top and fluorine doped tin oxide (FTO) as bottom electrode on a glass substrate. Albumen solution was firstly optimized for processing with deionized water (DI) with varying ratio, and the films prepared with 1: 1 ratio showed significantly improved switching characteristics compared to the diluted ones. Excellent resistive switching behavior was achieved from these ReRAM devices with on-off ratios greater than 10
⁴
with high repeatability and endurance. Moreover, dependence of switching behavior on heating was studied with temperatures of 40°C, 120°C and 200°C showing stable device performance at higher temperatures, though with reduced memory window.