Eu-doped GaN red LEDs for micro-LED displays with extremely high resolution

A novel red LED using Eu-doped GaN is a promising component for next-generation micro-LED display with ultrasmall-size, full-color, and high-resolution. The LED exhibits narrow-band red emission and the wavelength is almost independent of ambient temperature and injected current. Monolithic integration of vertically stacked full-color LEDs on a sapphire substrate and a possible green emitter are demonstrated.