Multi-level Analog Programmable Graphene Resistive Memory with Fractional Channel Ferroelectric Switching in Hafnium Zirconium Oxide

This paper reports multi-level programming of ferroelectrically modulated resistive memory in two-dimensional atomically thin graphene. The ferroelectric film utilized is hafnium zirconium oxide (HZO). The device uses a graded potential across the graphene resistor for fractional ferroelectric switching of the underlying HZO, which in turn produces an analog modulation of graphene resistance. A multi-level modulation of 13.3% was achieved in a graphene resistor of 22 kΩ nominal resistance, with programming voltages from 0 to 8.5 volts to achieve symmetric and asymmetric programming of up to 31 distinct resistive levels of memory. This device has potential of storing analog values for neuromorphic computing. The device architecture constitutes a thickness of ~20nm, which allows for high spatial density integration and aggressive voltage scaling.