Dielectrically modulated source side cavited SOI FET-Based Bio-sensor

In this paper, we have designed and analyzed the application of fully depleted SOI MOSFET as bio-sensor by developing a source sided cavity below the gate electrode. Device design and simulation is done using Silvaco TCAD simulator. The performance analyses of the proposed biosensor is studied using threshold voltage sensitivity and ON state drain current sensitivity for cavity length of 40nm, 50nm, 60nm, 70nm. Considering the threshold voltage as sensing parameter, 50 nm cavity length is observed to exhibits better sensitivity compared to others. While considering the ON state drain current as the sensing parameters, 70 nm cavity length showed higher sensitivity. Further the sensitivity of the proposed bio-sensor is studied for different fill factor (50%, 75% and 100%), as expected the sensitivity for fully filled cavited device exhibited higher sensitivity.