Design and Comparison Analysis of Ge-source Hetero-stacked L-shape TFET with Homo-stacked L-shape TFET

In this paper, we propose and investigate a novel Hetero-stacked L-shape TFET using Silvaco TCAD simulation tool. Due to hetero-stacking of Ge material and Si material, higher Ion/Ioff ratio is obtained in the proposed Ge source based hetero-stacked L-shape TFET in comparison to Homo-stacked L-shape TFET. Further, the proposed structure not only provides higher Ion/Ioff ratio but also provides very low SS in comparison to Homo-stacked L-shape TFET. Further, this structure is vertically stacked so this non-planar TFET structure would require small area on the wafer as compared to the planar conventional TFET structures.