Comparison of symmetric and asymmetric double gate MOSFETs: tunneling currents and hot electrons

In this work the symmetric and asymmetric Double-Gate MOSFETs are compared in terms of gate tunneling current and carrier heating. The results of device simulation show that a larger gate tunneling current is obtained in the case of the asymmetric gate structure, compared to symmetric one. Moreover, the analysis of hot carrier effects indicates that the symmetric structure is characterized by slightly larger carrier heating. The results of this paper provide useful insights and indications about the implications on reliability of different available technological options for the realization of Double-Gate MOSFETs.