A Fully-Integrated Reconfigurable CMOS Power Amplifier Utilizing a Novel Impedance Matching Topology

This paper proposes a fully-integrated reconfigurable CMOS power amplifier (PA) utilizing a novel impedance matching topology towards switching the operating frequency band to be used. In this approach, only two impedance matching network arms controlled by digital bits, may create three switchable frequency bands. 6terminal triple-well NMOS is used to implement a robust RF switch to adjust the operating frequency band. The proposed multi-band power amplifier designed and fabricated in 0.18$\mu$ m CMOS process with die-size of 3.4mm $\times 1.5$ mm, delivers saturated output power (Psat) of 26.0/26.0/25.5 dBm, small-signal gain (S21) of 21/22/20 dB, power-added efficiency (PAE) of 20/20/18% at the three targeted frequency bands, respectively. The measured results conclude that the proposed power amplifier can cover frequency ranges of 850-1200MHz, 1200-1550MHz and 15502100MHz, and thus providing respective 3-dB bandwidth of 350MHz, 350MHz and 550MHz, showing promising advancement compared to the state-of-the-art.