Silicon nanowire memory using surface charging and its operation analysis by scanning Maxwell-stress microcopy (SMM)

Charge-sensitive silicon nanowires with in-plane side gates for charging control were fabricated by simple processes with only a single step lithography, and the electrical characteristics as the memory was evaluated. In order to investigate relationship between charging induced by the side gate and the memory operation, surface potential of the device in the memory operation sequence was evaluated by means of scanning Maxwell-stress microscopy (SMM).