Analysis and Modeling of Current Mismatch in Negative Capacitance Field-Effect Transistor

In this work, we analyze the impact of random dopant fluctuations (RDFs) on the mismatch behavior of the negative capacitance field-effect transistor (NCFET). We observe that the drain current mismatch decreases in the NCFET compared to conventional MOSFET, and it further decreases with an increase in the thickness of the ferroelectric layer (
${t}_{\text {fe}}$
). Metal–ferroelectric–metal–insulator–semiconductor (MFMIS)-type NCFET shows 24% and 22% improvement in mismatch power in comparison to baseline FET at
$\vert {V}_{\text {GS}}\vert = {0.2}$
and 1 V, respectively. We show that the mismatch in NCFET is directly proportional to channel doping concentration, similar to baseline MOSFET. For the first time, we demonstrate that mismatch power varies nonmonotonically with the variation in the Landau coefficient
$\alpha $
, and the other Landau coefficient
$\beta $
has an impact on mismatch at higher
${t}_{\text {fe}}$
only. We also present a compact model, under the industry standard Berkeley Short-channel IGFET Model for Bulk MOSFET (BSIM-BULK) MOS model’s framework, which can accurately capture drain current mismatch from subthreshold to strong inversion region for NCFET. The model is extensively validated with the experimentally calibrated technology computer-aided design (TCAD) simulations across different biases and temperatures.