A Heterogeneously Integrated Double-Sided Cooling Silicon Carbide Power Module

A novel half-bridge silicon carbide (SiC) double-sided cooling power module with integrated gate drivers, decoupling capacitors (C
dec
), temperature sensors, and a current sensor is proposed. 45-degree vertical connection blocks to provide maximum heat dissipation path were proposed. It electrically connects the bottom to the top direct bond copper (DBC) substrate to complete the half-bridge assembly. A low temperature co-fired ceramic (LTCC) based interposer providing mechanical strength between the two substrates and electrical isolation is used. The gate driver die integrated inside the module is a non-isolated single-channel driver with a variable drive strength control feature that can safely operate up to 175ºC. Giant magnetoresistance (GMR) based current measurement solution is implemented, which is contactless and can measure both AC and DC current. A multi-layer LTCC or printed circuit board (PCB) based AC power terminal is proposed to integrate the GMR sensor into the module. The power loop inductance of this highly integrated power module is 1.5 nH. The thermal resistance of this power module package is only 0.06 K/W. This work seeks to overcome the volumetric power density limitations of conventional packaging technologies.