Control of the positioning of self-assembling Si quantum dots on ultrathin SiO/sub 2//c-Si by using scanning probe

In this paper, we demonstrate two different techniques for the positioning of reactive sites for self-assembling Si dots in LPCVD. In the one way, nanometer-scale modification of the initial SiO/sub 2/ surface before LPCVD is made by using the tip of a scanning tunneling microscope (STM) in low pressure H/sub 2/ ambient. The other method is based on the surface modification of SiO/sub 2/ using an electrically-active atomic force microscope (AFM) probe.