SPICE models for electrical simulation of commercial MOSFET arrays ALD1105/06/07

In this work, several parameter extraction procedures were performed on commercial Mosfets ALD1105 and ALD1106/07. The data were fit to find a suitable Spice model for their use on electrical simulations. Since Mosfet Spice levell parameters have a direct physical meaning, the presented methodology represents an introductory tool for Mosfet modeling. Moreover, these models can be used for circuit development at transistor level. Simulation results are in good agreement with experimental data.