Hybrid nanostructures based on InGaN nanowires with deposited Ag NPs-SiOx for visible emission range

InGaN nanowires were synthesized by molecular beam epitaxy. The colloidal method was used to synthesize silver NPs coated with SiOx layers of different thicknesses. The dependence of the PL response of the InGaN-Ag-SiOx hybrid structure on the thickness of the SiOx layer has been studied for the first time.