Influence of waveguide composition on the efficiency of 940–980 nm InGaAs/AlGaAs/GaAs laser diodes

Approaches to improve the L- I characteristics of laser diodes emitting at 940–980 nm based on InGaAs/AlGaAs/GaAs separate confinement double heterostructures with an asymmetric broadened waveguide are studied. The influence of the waveguide composition on the lasers output characteristics is analyzed. It is shown that a decrease in the energy depth of the QW leads to a decrease in series and thermal resistances and cut-off voltage that allows to improve output characteristics.