Unipolar heterostructures with effective interband radiative recombination under current pumping

Design principles of isotype heterostructures for efficient interband recombination under electric current pumping are developed. Transport and radiative recombination features are studied for the InGaAs/AlGaAs/GaAs isotype heterostructure with the energy balance model. The radiative recombination current 43 A (with a pumping current 200 A) and the maximum internal quantum efficiency is 28% (at 55–65 A) were demonstrated in structures with 3 quantum wells. At currents above 15 A, the carrier density accumulated in the active region reaches a value of 3.10
¹⁸
cm
^-3
, which shows the possibility of unipolar laser diodes developing.