Non-Enzymatic Glucose Detection Based on GO/Ag Nanocomposite in SiO2 Trench Embedded Field Effect Transistor

This study demonstrates the application of graphene oxide-silver (GO/Ag) nanocomposite to develop a non-enzymatic high-performance glucose-sensing field-effect transistor (FET). Lithography and etching processes are used to fabricate the SiO
₂
trench embedded FET. The fabricated device structure was used not only for glucose storage but also for glucose sensing. The bonding of the GO/Ag nanocomposite was validated by analysing their shape and structure. As the concentration of glucose rises (
$1~\mu \text{M}$
to 10 mM range), the output electrical signal changes. With a
$1~\mu \text{M}$
limit of detection (Signal to Noise ratio, S/N >3), the sensor has a response time of fewer than 5 seconds. It also demonstrated great long-term stability, outstanding reproducibility, and excellent glucose selectivity. This sensor has notable characteristics such as ease of production, simplicity of usage, and small size. It has the potential to fabricate portable glucose sensors for point-of-care sensing in the future. Additional liquid sensing applications could benefit from the sensor structure.