An Extensive Study of Various Performance Parameters of OTFTs using Trilayer Source Drain Electrodes

OTFT modelling, fabrication and application has reached remarkable progress during recent years owing to its reduced complications when related to the traditional technologies. In former technologies, the high temperature and high vacuum deposition process were involved along with the sophisticated photolithographic patterning methods. Also, in conventional Si technology, more intricate processing methods were incorporated which is replaced by minimum temperature deposition and solution processing recently. OTFTs are commonly used in a number of applications, including sensors and REID memory devices. The actual situation of organic thin film transistors with tri-layer source drain electrodes is examined in depth in this scientific report. Also, the dielectric materials and their types are analyzed. A broad review encompassing the existing research works are also discussed. The current developments, design and the applications of the OTFTs are presented with an emphasis of research works published since 2010. This research work remains as a resourceful knowledge for upcoming research works in this area.