A 38μm-Pitch, 3-Output Gate Driver Using Low-Temperature Poly-Si Oxide TFTs for High Resolution Display

We report a 38
$\mu \text{m}$
-pitch gate driver with three outputs using low-temperature poly-Si oxide (LTPO) thin-film transistors (TFTs) for ultra-high definition (UHD) display. A single stage of the proposed gate driver circuit consists of ten TFTs, six p-type low-temperature poly-Si (LTPS) and four n-type amorphous InGaZnO (a-IGZO) TFTs for three outputs. Three clock (CLK) signals are used for three outputs in one stage. The fabricated gate driver circuit, using the depletion mode a-IGZO TFTs with threshold voltage (
$\text{V}_{{{\mathrm {TH}}}}$
) of −3.5 V, successfully operates with a pulse width of
$1~\mu \text{s}$
. This can be used for 8k4k resolution display operated at refresh rate of 240 Hz. The power consumption can be as low as 9.4 mW at 4k2k (
$3840\times2160$
) resolution operated at 120 Hz. The proposed gate driver therefore can be utilized for UHD display with LTPO TFT backplane.