Determinants Affecting the Performance of CZTSSe: Antisite Defects and Multiple Quantum Confinement for Photon-Sensitive Devices

For its earth availability and non-toxicity, kesterite (CZTS, CZTSe and CZTSSe) material has gained much importance in photon-sensitive(PS) applications. Additionally, effect of multiple carrier confinement adds the performance of the devices.The high
${V}_{\textit {oc}} $
deficit in chalcogenide materials is caused by structural antisite defects. The use of carrier confinement using Quantum Wells with CZTSSe and CZTS as well and barrier material has been investigated in this study. The defect distribution on the CZTS material and the effects of creating more potential wells with variations in the (S,Se) composition of CZTSSe is explored. The analsysis has a substantial influence on the electrical and optical properties of the absorber layer. The quantum efficiency is also calculated in order to observe sensitivity of device w.r.t solar spectrum. A comparative analysis is performed between four major aspects: first, the performance of with and without defect structures, second, the compositional change of S,Se in CZTSSe material, third, the growth in the number of QWs, and finally, the variation in defect density. According to the findings of the study, recombination in the barrier region has a significant impact in the performance of QW structures, particularly higher QW structures. According to the acquired results, at a defect density on the order of 10
¹⁷
, a range of nearly 16 to 18% efficiency has been achieved for the 70QW structure for various CZTSSe compositions.