Monolithic n+-InGaAs Thin Film Resistor from DC up to 0.5 THz

We report on the design, fabrication, and characterization of a monolithically integrated epitaxial thin-film resistor for THz applications. The device is made of an n
^+-
InGaAs layer grown lattice-matched on an insulating InP:Fe substrate. In this study, on-wafer vector scattering parameter characterization up to 500 GHz is carried out, the calibration is performed by means of the multiline TRL method. The InGaAs thin-film resistor shows very flat frequency response in the range from 100 GHz to 500 GHz. An experiment designed to investigate the resistor’s temperature dependence and stability up to 120 °C has also been carried out.