In-situ Surface Temperature Monitoring through Wafer Temperature Sensing and Heat Transfer Modeling for O2/N2 Plasma Process

In the plasma strip process, temperature is one of the important factors affecting the etching rate and product yield, and in order to monitor the quality of semiconductor products, it is necessary to check the wafer surface temperature during the dry strip process. In this study, an instrument capable of measuring the temperature of the wafer surface with outstanding durability at low cost was fabricated for the plasma process. Using the manufactured measuring instrument, the actual surface temperature distribution trend was confirmed in the O2/N2 plasma process of the SUPRA N, a dry strip equipment of PSK inc. In addition, based on the experimental data on the surface temperature and the heat transfer theory, simulation modeling for the wafer surface temperature during the plasma process was derived, and its validity was verified by applying it to other processes. Meaningful temperature prediction data obtained by applying heat transfer modeling to the plasma process where pin control and wafer position were investigated as experimental variables, and through this, the surface temperature can predict in the plasma process of PSK equipment.