The effects of proton irradiation on SiGe:C HBTs

The effects of 63 MeV proton irradiation on SiGe:C heterojunction bipolar transistors (HBTs) are reported for the first time. The dc characteristics and neutral base recombination of these SiGe:C HBTs were investigated for proton fluences up to 5/spl times/10/sup 13/ p/cm/sup 2/. A comparison is made with SiGe HBTs fabricated in the same technology. Despite the fact that these SiGe:C HBTs degrade significantly during proton exposure, there is no indication that the carbon doping has any significant impact on the radiation response.